IRHNA7160_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD-91396F
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
IRHNA7160
JANSR2N7432U
100V, N-CHANNEL
REF: MIL-PRF-19500/664
RAD-Hard^™ HEXFET^® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHNA7160 100K Rads (Si)
IRHNA3160 300K Rads (Si)
IRHNA4160 500K Rads (Si)
IRHNA8160 1000K Rads (Si)
RDS(on)
0.04Ω
0.04Ω
0.04Ω
0.04Ω
ID QPL Part Number
51A JANSR2N7432U
51A JANSF2N7432U
51A JANSG2N7432U
51A JANSH2N7432U
SMD - 2
International Rectifier’s RAD-Hard^TM HEXFET^® technology
provides high performance power MOSFETs for space
applications. This technology has over a decade of proven
performance and reliability in satellite applications. These
devices have been characterized for both Total Dose and
Single Event Effects (SEE). The combination of low Rdson
and low gate charge reduces the power losses in switching
applications such as DC to DC converters and motor control.
These devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight
n ESD Class: 3B per MIL-STD-750, Method 1020
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
51
32.5
204
300
2.4
±20
500
51
30
7.3
-55 to 150
300 (for 5s)
3.3 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
For footnotes refer to the last page
www.irf.com
1
03/26/14