IRHNA7064_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD-91416E
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT(SMD-2)
IRHNA7064
JANSR2N7431U
60V, N-CHANNEL
REF: MIL-PRF-19500/664
RAD-Hard^™ HEXFET^® TECHNOLOGY
Product Summary
Part Number
IRHNA7064
IRHNA3064
Radiation Level
100K Rads (Si)
300K Rads (Si)
RDS(on) ID QPL Part Number
0.015Ω 75A* JANSR2N7431U
0.015Ω 75A* JANSF2N7431U
IRHNA4064 500K Rads (Si) 0.015Ω 75A* JANSG2N7431U
IRHNA8064 1000K Rads (Si) 0.015Ω 75A* JANSH2N7431U
SMD-2
International Rectifier’s RAD-Hard^TM HEXFET^®
technology provides high performance power
MOSFETs for space applications. This technology
has over a decade of proven performance and
reliability in satellite applications. These devices have
been characterized for both Total Dose and Single
Event Effects (SEE). The combination of low Rdson
and low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight
temperature stability of electrical parameters.
n ESD Class: 3B per MIL-STD-750, Method 1020
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
Pre-Irradiation
Units
75*
56
A
300
300
W
2.4
W/°C
±20
V
500
mJ
75*
A
30
mJ
2.5
V/ns
-55 to 150
°C
300 (for 5sec)
3.3 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
03/26/14