IRHNA67260_15 Datasheet, PDF (1/9 Pages) International Rectifier – Simple Drive Requirements

PD-94342G
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
2N7583U2
IRHNA67260
200V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHNA67260 100K Rads (Si)
IRHNA63260 300K Rads (Si)
RDS(on)
0.028Ω
0.028Ω
ID
56A*
56A*
International Rectifier’s R6^TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer (LET)
up to 90MeV/(mg/cm²). Their combination of very low
RDS(on) and faster switching times reduces power
loss and increases power density in today’s high
speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
SMD-2
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
n ESD Rating: Class 3A per MIL-STD-750, Method 1020
Absolute Maximum Ratings
Parameter
ID @VGS = 12V,TC = 25°C
ID @VGS = 12V,TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
www.irf.com
56*
40
224
250
2.0
±20
283
56
25
5.0
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (for 5s)
3.3 (Typical)
g
1
04/01/14