IRHNA597160_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD-94493C
IRHNA597160
RADIATION HARDENED
JANSR2N7550U2
POWER MOSFET
100V, P-CHANNEL
SURFACE MOUNT (SMD-2)
REF: MIL-PRF-19500/713
5 TECHNOLOGY
™
Product Summary
Part Number Radiation Level Rds(on) ID QPL Part Number
IRHNA597160 100K Rads (Si) 0.049Ω -47A JANSR2N7550U2
IRHNA593160 300K Rads (Si) 0.049Ω -47A JANSF2N7550U2
International Rectifier’s R5^TM technology provides high
performance power MOSFETs for space applications.
These devices have been characterized for Single Event
Effects (SEE) with useful performance up to an LET of
80 (MeV/(mg/cm²)). The combination of low RDS(on) and
low gate charge reduces the power losses in switching
applications such as DC to DC converters and motor
control. These devices retain all of the well established
advantages of MOSFETs such as voltage control, fast
switching, ease of paralleling and temperature stability
of electrical parameters.
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC =100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
www.irf.com
SMD-2
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
-47
-30
-188
250
2.0
±20
400
-47
25
-10
-55 to 150
300 (for 5s)
3.3 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
1
12/13/07