IRHNA597160 Datasheet, PDF (1/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

PD-94493A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level Rds(on)
IRHNA597160 100K Rads (Si) 0.049Ω
IRHNA593160 300K Rads (Si) 0.049Ω
ID Q
-47A
-47A
IRHNA597160
100V, P-CHANNEL
5 TECHNOLOGY
™
International Rectifier’s R5^TM technology provides high
performance power MOSFETs for space applications.
These devices have been characterized for Single Event
Effects (SEE) with useful performance up to an LET of
80 (MeV/(mg/cm²)). The combination of low RDS(on) and
low gate charge reduces the power losses in switching
applications such as DC to DC converters and motor
control. These devices retain all of the well established
advantages of MOSFETs such as voltage control, fast
switching, ease of paralleling and temperature stability
of electrical parameters.
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC =100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
SMD-2
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Pre-Irradiation
Units
-47
-30
A
-188
250
W
2.0
W/°C
±20
V
400
mJ
-47
A
25
mJ
-10
V/ns
-55 to 150
o_C
300 ( for 5s )
3.3 ( Typical )
g
For footnotes refer to the last page
www.irf.com
1
03/16/06