IRHNA57Z60_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD-91787I
IRHNA57Z60
RADIATION HARDENED
JANSR2N7467U2
POWER MOSFET
30V, N-CHANNEL
SURFACE MOUNT (SMD-2)
Product Summary
REF: MIL-PRF-19500/683
5 TECHNOLOGY
™
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHNA57Z60 100K Rads (Si) 0.0035Ω 75A* JANSR2N7467U2
IRHNA53Z60 300K Rads (Si) 0.0035Ω 75A* JANSF2N7467U2
IRHNA54Z60 500K Rads (Si) 0.0035Ω 75A* JANSG2N7467U2
IRHNA58Z60 1000K Rads (Si) 0.0040Ω 75A* JANSH2N7467U2
International Rectifier’s R5^TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm²)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
SMD-2
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
75*
75*
300
250
2.0
±20
500
75
25
0.83
-55 to 150
300 (for 5s)
3.3 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o_C
g
* Current is limited by package
For footnotes refer to the last page
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1
03/08/07