IRHNA3160 Datasheet, PDF (1/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

PD - 91396C
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
IRHNA7160
100V, N-CHANNEL
REF: MIL-PRF-19500/664
RAD-Hard^™ HEXFET^®
MOSFET TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHNA7160 100K Rads (Si) 0.04Ω 51A JANSR2N7432U
IRHNA3160 300K Rads (Si) 0.04Ω 51A JANSF2N7432U
IRHNA4160 600K Rads (Si) 0.04Ω 51A JANSG2N7432U
IRHNA8160 1000K Rads (Si) 0.04Ω 51A JANSH2N7432U
SMD - 2
International Rectifier’s RADHard HEXFET^® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
51
32.5
A
204
300
W
2.4
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
±20
500
51
30
7.3
-55 to 150
V
mJ
A
mJ
V/ns
o_C
Pckg. Mounting Surface Temp.
Weight
300 ( for 5s)
3.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
5/4/2000