IRHN9250_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD-91300E
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-1)
IRHN9250
JANSR2N7423U
200V, P-CHANNEL
REF: MIL-PRF-19500/662
RAD Hard^™ HEXFET^® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHN9250 100K Rads (Si)
IRHN93250 300K Rads (Si)
RDS(on)
0.315Ω
0.315Ω
ID
-14A
-14A
QPL Part Number
JANSR2N7423U
JANSF2N7423U
SMD-1
International Rectifier’s RADHard HEXFET^TM technology
provides high performance power MOSFETs for space
applications. This technology has over a decade of proven
performance and reliability in satellite applications. These
devices have been characterized for both Total Dose and
Single Event Effects (SEE). The combination of low Rdson
and low gate charge reduces the power losses in switching
applications such as DC to DC converters and motor
control. These devices retain all of the well established
advantages of MOSFETs such as voltage control, fast
switching, ease of paralleling and temperature stability of
electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n SimpleDriveRequirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n CeramicPackage
n Light Weight
n ESD Rating: Class 2 per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
PCKG Mounting Surface Temp.
Weight
-14
-9.0
-56
150
1.2
±20
500
-14
15
-41
-55 to 150
300 ( for 5s)
2.6 (typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
For footnotes refer to the last page
www.irf.com
1
05/13/14