IRHN7450_15 Datasheet, PDF (1/12 Pages) International Rectifier – Simple Drive Requirements

PD - 90819B
RADIATION HARDENED
IRHN7450
JANSR2N7270U
POWER MOSFET
500V, N-CHANNEL
SURFACE MOUNT (SMD-1)
REF: MIL-PRF-19500/603
RAD-Hard^™ HEXFET^® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHN7450 100K Rads (Si) 0.45Ω 11A JANSR2N7270U
IRHN3450 300K Rads (Si) 0.45Ω 11A JANSF2N7270U
IRHN4450 500K Rads (Si) 0.45Ω 11A JANSG2N7270U
IRHN8450 1000K Rads (Si) 0.45Ω 11A JANSH2N7270U
SMD-1
International Rectifier’s RAD-Hard^TM HEXFET^® technology
provides high performance power MOSFETs for space
applications. This technology has over a decade of
proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low Rdson and low gate charge reduces
the power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
PCKG. Mounting Surface Temp.
Weight
For footnotes refer to the last page
www.irf.com
11
7.0
44
150
1.2
±20
500
11
15
3.5
-55 to 150
300 (for 5s)
2.6 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o_C
g
1
05/18/06