IRHN7450 Datasheet, PDF (1/12 Pages) International Rectifier – HEXFET TRANSISTOR

PD - 90819A
IRHN7450
IRHN8450
REPETITIVE AVALANCHE AND dv/dt RATED
JANSR2N7270U
HEXFET^® TRANSISTOR
JANSH2N7270U
N CHANNEL
MEGA RAD HARD
500Volt, 0.45Ω, MEGA RAD HARD HEXFET Product Summary
International Rectifier’s RAD HARD technology
HEXFETs demonstrate excellent threshold voltage
stability and breakdown voltage stability at total
radiaition doses as high as 1x10⁶ Rads(Si). Under
identical pre- and post-irradiation test conditions, In-
ternational Rectifier’s RAD HARD HEXFETs retain
identical electrical specifications up to 1 x 10⁵ Rads
(Si) total dose. No compensation in gate drive circuitry
is required. These devices are also capable of surviv-
ing transient ionization pulses as high as 1 x 10¹² Rads
(Si)/Sec, and return to normal operation within a few
microseconds. Since the RAD HARD process utilizes
International Rectifier’s patented HEXFET technology,
the user can expect the highest quality and reliability
in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy
pulse circuits in space and weapons environments.
Absolute Maximum Ratings 
Part Number
IRHN7450
IRHN8450
BVDSS
500V
500V
RDS(on)
ID
0.45Ω 11A
0.45Ω 11A
Features:
n Radiation Hardened up to 1 x 10⁶ Rads (Si)
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Ceramic Eyelets
n Surface Mount
n Light Weight
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
IRHN7450, IRHN8450 Units
Continuous Drain Current
Continuous Drain Current
11
7.0
A
Pulsed Drain Current ‚
44
Max. Power Dissipation
150
W
Linear Derating Factor
1.2
W/°C
Gate-to-Source Voltage
±20
V
Single Pulse Avalanche Energy ƒ
500
mJ
Avalanche Current ‚
11
A
Repetitive Avalanche Energy‚
15
mJ
Peak Diode Recovery dv/dt „
3.5
V/ns
Operating Junction
Storage Temperature Range
-55 to 150
o_C
Lead Temperature
300 (0.063 in. (1.6mm) from case for 10s)
Weight
2.6 (typical)
g
www.irf.com
1
02/01/99