IRHN7250_15 Datasheet, PDF (1/12 Pages) International Rectifier – Simple Drive Requirements

PD-90679H
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT(SMD-1)
IRHN7250
JANSR2N7269U
200V, N-CHANNEL
REF:MIL-PRF-19500/603
RAD-Hard^™ HEXFET^® TECHNOLOGY
Product Summary
Part Number
IRHN7250
IRHN3250
IRHN4250
IRHN8250
Radiation Level
100K Rads (Si)
300K Rads (Si)
500K Rads (Si)
1000K Rads (Si)
RDS(on)
0.1Ω
0.1Ω
0.1Ω
0.1Ω
ID QPL Part Number
26A JANSR2N7269U
26A JANSF2N7269U
26A JANSG2N7269U
26A JANSH2N7269U
SMD-1
International Rectifier’s RAD-Hard^TM HEXFET^®
technology provides high performance power
MOSFETs for space applications. This technology
has over a decade of proven performance and
reliability in satellite applications. These devices have
been characterized for both Total Dose and Single
Event Effects (SEE). The combination of low Rds(on)
and low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
n ESD Rating: Class 3A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
Pre-Irradiation
Units
26
16
A
104
150
W
1.2
W/°C
±20
V
500
mJ
26
A
15
mJ
5.0
-55 to150
V/ns
°C
300 (for 5 sec)
2.6 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
09/05/14