IRHN7250 Datasheet, PDF (1/14 Pages) International Rectifier – TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.10ohm, Id=26A)

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Provisional Data Sheet PD 9.679C
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET^® TRANSISTOR
IRHN7250
IRHN8250
N-CHANNEL
MEGA RAD HARD
200 Volt, 0.10Ω, MEGA RAD HARD HEXFET
International Rectifier’s MEGA RAD HARD technology
HEXFET power MOSFETs demonstrate excellent
threshold voltage stability and breakdown voltage sta-
bility at total radiation doses as high as 1 x 10⁶ Rads
(Si). Under identical pre- and post-radiation test con-
ditions, International Rectifier’s RAD HARD HEXFETs
retain identical electrical specifications up to 1 x 10⁵
Rads (Si) total dose. At 1 x 10⁶ Rads (Si) total dose,
under the same pre-dose conditions, only minor shifts
in the electrical specifications are observed and are so
specified in table 1. No compensation in gate drive cir-
cuitry is required. In addition, these devices are capable
of surviving transient ionization pulses as high as 1 x
10¹² Rads (Si)/Sec, and return to normal operation within
a few microseconds. Single Event Effect (SEE) testing
of International Rectifier RAD HARD HEXFETs has dem-
onstrated virtual immunity to SEE failure. Since the
MEGA RAD HARD process utilizes International
Rectifier’s patented HEXFET technology, the user can
expect the highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, au-
dio amplifiers and high-energy pulse circuits in space
and weapons environments.
Product Summary
Part Number
BVDSS
IRHN7250
200V
IRHN8250
200V
RDS(on)
ID
0.10Ω 26A
0.10Ω 26A
Features:
s Radiation Hardened up to 1 x 10⁶ Rads (Si)
s Single Event Burnout (SEB) Hardened
s Single Event Gate Rupture (SEGR) Hardened
s Gamma Dot (Flash X-Ray) Hardened
s Neutron Tolerant
s Identical Pre- and Post-Electrical Test Conditions
s Repetitive Avalanche Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
s Surface Mount
s Light-weight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current Œ
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy 
Avalanche Current Œ
Repetitive Avalanche Energy Œ
Peak Diode Recovery dv/dt Ž
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
Pre-Radiation
IRHN7250, IRHN8250 Units
26
16
A
104
150
W
1.2
W/K 
±20
V
500
mJ
26
A
15
mJ
5.0
V/ns
-55 to 150
o_C
300 (for 5 sec.)
2.6 (typical)
g
To Order
F-347