IRHN7230 Datasheet, PDF (1/14 Pages) International Rectifier – TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A)

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Provisional Data Sheet No. PD-9.822A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET^® TRANSISTOR
IRHN7230
IRHN8230
N-CHANNEL
MEGA RAD HARD
200 Volt, 0.40Ω, MEGA RAD HARD HEXFET
International Rectifier’s MEGA RAD HARD technology
HEXFETs demonstrate excellent threshold voltage sta-
bility and breakdown voltage stability at total radiation
doses as high as 1 x 10⁶ Rads (Si). Under identical pre-
and post-radiation test conditions, International Rectifier’s
RAD HARD HEXFETs retain identical electrical specifi-
cations up to 1 x 10⁵ Rads (Si) total dose. At 1 x 10⁶ Rads
(Si) total dose, under the same pre-dose conditions, only
minor shifts in the electrical specifications are observed
and are so specified in table 1. No compensation in gate
drive circuitry is required. In addition, these devices are
capable of surviving transient ionization pulses as high
as 1 x 10¹² Rads (Si)/Sec, and return to normal operation
within a few microseconds. Single Event Effect (SEE)
testing of International Rectifier RAD HARD HEXFETs
has demonstrated virtual immunity to SEE failure. Since
the MEGA RAD HARD process utilizes International
Rectifier’s patented HEXFET technology, the user can
expect the highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Product Summary
Part Number
BVDSS
IRHN7230
200V
IRHN8230
200V
RDS(on)
0.40Ω
0.40Ω
ID
9.0A
9.0A
Features:
s Radiation Hardened up to 1 x 10⁶ Rads (Si)
s Single Event Burnout (SEB) Hardened
s Single Event Gate Rupture (SEGR) Hardened
s Gamma Dot (Flash X-Ray) Hardened
s Neutron Tolerant
s Identical Pre- and Post-Electrical Test Conditions
s Repetitive Avalanche Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
s Surface Mount
s Light-weight
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, au-
dio amplifiers and high-energy pulse circuits in space and
weapons environments.
Absolute Maximum Ratings
Pre-Radiation
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
Pulsed Drain Current Œ
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy 
Avalanche Current Œ
Repetitive Avalanche Energy Œ
dv/dt
Peak Diode Recovery dv/dt Ž
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
To Order
IRHN7230, IRHN8230
9.0
6.0
36
75
0.60
±20
330 (see fig. 29)
9.0
7.5
5.0 (see fig. 30)
-55 to 150
300 (for 5 seconds)
2.6 (typical)
Units
A
W
W/K 
V
mJ
A
mJ
V/ns
o_C
g