IRHN7150_15 Datasheet, PDF (1/12 Pages) International Rectifier – Simple Drive Requirements

PD - 90720E
RADIATION HARDENED
IRHN7150
JANSR2N7268U
POWER MOSFET
100V, N-CHANNEL
SURFACE MOUNT (SMD-1)
REF: MIL-PRF-19500/603
RAD Hard^™ HEXFET^® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHN7150 100K Rads (Si) 0.065Ω 34A JANSR2N7268U
IRHN3150 300K Rads (Si) 0.065Ω 34A JANSF2N7268U
IRHN4150 500K Rads (Si) 0.065Ω 34A JANSG2N7268U
IRHN8150 1000K Rads (Si) 0.065Ω 34A JANSH2N7268U
SMD-1
International Rectifier’s RADHard^TM HEXFET^® technology
provides high performance power MOSFETs for space
applications. This technology has over a decade of
proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low Rdson and low gate charge reduces
the power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
PCKG. Mounting Surface Temp.
Weight
For footnotes refer to the last page
www.irf.com
34
21
136
150
1.2
±20
500
34
15
5.5
-55 to 150
300 (for 5s)
2.6 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o_C
g
1
05/11/06