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IRHN7054 Datasheet, PDF (1/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
PD-90884D
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-1)
IRHN7054
JANSR2N7394U
60V, N-CHANNEL
REF: MIL-PRF-19500/603
RAD-Hard™ HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHN7054
100K Rads (Si)
IRHN3054
300K Rads (Si)
IRHN4054
500K Rads (Si)
IRHN8054 1000K Rads (Si)
RDS(on)
0.027Ω
0.027Ω
0.027Ω
0.040Ω
ID QPL Part Number
35A JANSR2N7394U
35A JANSF2N7394U
35A JANSG2N7394U
35A JANSH2N7394U
International Rectifier’s RAD-HardTM HEXFET®
technology provides high performance power
MOSFETs for space applications. This technology
has over a decade of proven performance and
reliability in satellite applications. These devices have
been characterized for both Total Dose and Single
Event Effects (SEE). The combination of low Rdson
and low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
SMD-1
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
n Surface Mount
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
For footnotes refer to the last page
www.irf.com
35
30
283
150
1.2
±20
500
35
15
3.5
-55 to 150
300 (5sec)
2.6 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
1
05/15/06