IRHMS67164 Datasheet, PDF (1/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

PD-96958
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
Part Number Radiation Level
IRHMS67164 100K Rads (Si)
IRHMS63164 300K Rads (Si)
RDS(on)
0.019Ω
0.019Ω
ID
45A*
45A*
IRHMS67164
150V, N-CHANNEL
TECHNOLOGY
International Rectifier’s R6^TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm²).
Their combination of very low RDS(on) and faster
switching times reduces power loss and increases
power density in today’s high speed switching
applications such as DC-DC converters and motor
controllers. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, ease of paralleling and temperature stability
of electrical parameters.
Low-Ohmic
TO-254AA
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
Units
45*
44
A
180
208
W
1.67
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy Á
353
Avalanche Current À
45
Repetitive Avalanche Energy À
20.8
Peak Diode Recovery dv/dt Â
8.2
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300 (0.063 in. /1.6 mm from case for 10s)
Weight
9.3 (Typical)
V
mJ
A
mJ
V/ns
o_C
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
12/22/05