IRHMS67160_15 Datasheet, PDF (1/9 Pages) International Rectifier – Simple Drive Requirements

PD-94723E
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
2N7580T1
IRHMS67160
100V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHMS67160 100K Rads (Si)
IRHMS63160 300K Rads (Si)
RDS(on)
0.011Ω
0.011Ω
ID
45A*
45A*
International Rectifier’s R6^TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm²). Their combination of
very low RDS(on) and faster switching times reduces
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
Low-Ohmic
TO-254AA
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
45*
45*
180
208
1.67
A
W
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy Á
512
Avalanche Current À
45
Repetitive Avalanche Energy À
20.8
Peak Diode Recovery dv/dt Â
6.3
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300 (0.063 in. /1.6 mm from case for 10s)
Weight
9.3 (Typical)
V
mJ
A
mJ
V/ns
°C
g
* Current is limited by package
For footnotes refer to the last page
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11/23/10