IRHMS597064_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD-94713C
IRHMS597064
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
JANSR2N7524T1
60V, P-CHANNEL
REF: MIL-PRF-19500/733
5 TECHNOLOGY
™
Part Number Radiation Level
IRHMS597064 100K Rads (Si)
IRHMS593064 300K Rads (Si)
RDS(on)
0.017Ω
0.017Ω
ID QPL Part Number
-45A* JANSR2N7524T1
-45A* JANSF2N7524T1
Low-Ohmic
TO-254AA
International Rectifier’s R5^TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm²)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy Á
IAR
Avalanche Current À
EAR
Repetitive Avalanche Energy À
dv/dt
Peak Diode Recovery dv/dt Â
TJ
Operating Junction
TSTG
Storage Temperature Range
Lead Temperature
Weight
Units
-45*
-45*
A
-180
208
W
1.67
W/°C
±20
V
890
mJ
-45
A
20.8
mJ
-3.8
V/ns
-55 to 150
o_C
300 (0.063 in./1.6 mm from case for 10s)
9.3 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
03/30/12