IRHMS593260 Datasheet, PDF (1/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

PD - 94605
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS597260
200V, P-CHANNEL
4# TECHNOLOGY
c
Product Summary
Part Number Radiation Level
IRHMS597260 100K Rads (Si)
IRHMS593260 300K Rads (Si)
RDS(on)
0.103Ω
0.103Ω
ID
-32A
-32A
Low-Ohmic
TO-254AA
International Rectifier’s R5^TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm²)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Features:
n Single Event Effect (SEE) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electically Isolated
n Ceramic Eyelets
n Light Weight
n High Electrical Conductive Package
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
-32
-20
-128
208
1.67
A
W
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy ➁
354
mJ
IAR
Avalanche Current ➀
-32
A
EAR
Repetitive Avalanche Energy ➀
25
mJ
dv/dt
Peak Diode Recovery dv/dt ➂
-4.1
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
-55 to 150
o_C
300 (0.063in./1.6mm from case for 10s)
9.3 ( Typical )
g
For footnotes refer to the last page
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1
02/13/03