IRHMS57Z60_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD-96961B
IRHMS57Z60
RADIATION HARDENED
JANSR2N7478T1
POWER MOSFET
30V, N-CHANNEL
THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
REF: MIL-PRF-19500/697
5 TECHNOLOGY
™
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHMS57Z60 100K Rads (Si) 0.0055Ω 45A* JANSR2N7478T1
IRHMS53Z60 300K Rads (Si) 0.0055Ω 45A* JANSF2N7478T1
IRHMS54Z60 500K Rads (Si) 0.0055Ω 45A* JANSG2N7478T1
IRHMS58Z60 1000K Rads (Si) 0.0055Ω 45A* JANSH2N7478T1
Low-Ohmic
TO-254AA
International Rectifier’s R5^TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm²)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
n ESD Rating: Class 3B per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current 
Max. Power Dissipation
Linear Derating Factor
45*
45*
180
208
1.67
A
W
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy ‚
1250
Avalanche Current 
45
Repetitive Avalanche Energy 
20.8
Peak Diode Recovery dv/dt ƒ
1.08
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300 (0.063 in. /1.6 mm from case for 10s)
Weight
9.3 (Typical)
V
mJ
A
mJ
V/ns
°C
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
06/04/15