IRHMJ7250_15 Datasheet, PDF (1/12 Pages) International Rectifier – Simple Drive Requirements

PD-96914
IRHMJ7250
RADIATION HARDENED
200V, N-CHANNEL
POWER MOSFET
RAD Hard^™ HEXFET^® TECHNOLOGY
SURFACE MOUNT (TO-254AA Tabless)
Product Summary
Part Number Radiation Level RDS(on) ID
IRHMJ7250 100K Rads (Si) 0.10Ω 26A
IRHMJ3250 300K Rads (Si) 0.10Ω 26A
IRHMJ4250 600K Rads (Si) 0.10Ω 26A
IRHMJ8250 1000K Rads (Si) 0.10Ω 26A
International Rectifier’s RADHard HEXFET^® technology
provides high performance power MOSFETs for
space applications. This technology has over a
decade of proven performance and reliability in
satellite applications. These devices have been
characterized for both Total Dose and Single Event
Effects (SEE). The combination of low Rdson and
low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
www.irf.com
TO-254AA Tabless
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Light Weight
26
16
104
150
1.2
±20
500
26
15
5.0
-55 to 150
300 (for 5s)
8.0 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o_C
g
1
12/24/04