IRHMB57Z60_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD-96973A
RADIATION HARDENED
IRHMB57Z60
POWER MOSFET
30V, N-CHANNEL
THRU-HOLE (Tabless - Low-Ohmic TO-254AA)
5 TECHNOLOGY
™
Product Summary
Part Number
IRHMB57Z60
IRHMB53Z60
IRHMB54Z60
IRHMB58Z60
Radiation Level
100K Rads (Si)
300K Rads (Si)
600K Rads (Si)
1000K Rads (Si)
RDS(on)
0.0055Ω
0.0055Ω
0.0055Ω
0.0055Ω
ID
45A*
45A*
45A*
45A*
Tabless
Low-Ohmic
TO-254AA
International Rectifier’s R5^TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm²)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
n ESD Rating: Class 3B per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current 
Max. Power Dissipation
Linear Derating Factor
45*
45*
180
208
1.67
A
W
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy ‚
1250
Avalanche Current 
45
Repetitive Avalanche Energy 
20.8
Peak Diode Recovery dv/dt ƒ
1.08
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300 (0.063 in. /1.6 mm from case for 10s)
Weight
8.0 (Typical)
V
mJ
A
mJ
V/ns
°C
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
06/04/15