IRHM93260 Datasheet, PDF (1/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE

PD - 93858
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number Radiation Level
IRHM9260 100K Rads (Si)
IRHM93260 300K Rads (Si)
RDS(on)
0.160Ω
0.160Ω
IRHM9260
JANSR2N7426
200V, P-CHANNEL
REF: MIL-PRF-19500/660
RAD-Hard^™ HEXFET^® TECHNOLOGY
ID QPL Part Number
-27A JANSR2N7426
-27A JANSF2N7426
TO-254AA
International Rectifier’s RAD-Hard^TM HEXFET^®
MOSFET technology provides high performance
power MOSFETs for space applications. This tech-
nology has over a decade of proven performance
and reliability in satellite applications. These de-
vices have been characterized for both Total Dose
and Single Event Effects (SEE). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These de-
vices retain all of the well established advantages
of MOSFETs such as voltage control, fast switch-
ing, ease of paralleling and temperature stability
of electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermatically Sealed
n Electically Isolated
n Ceramic Eyelets
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
Operating Junction
TSTG
Storage Temperature Range
Lead Temperature
Weight
Units
-27
-17
A
-108
250
W
2.0
W/°C
±20
V
500
mJ
-27
A
25
mJ
-9.0
-55 to 150
V/ns
o_C
300 (0.063in./1.6mm from case for 10s)
9.3 (Typical)
g
For footnotes refer to the last page
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1
11/27/00