IRHM9250_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-254AA)
PD-91299E
IRHM9250
JANSR2N7423
200V, P-CHANNEL
REF: MIL-PRF-19500/662
RAD-Hard^™ HEXFET^® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHM9250 100K Rads (Si)
IRHM93250 300K Rads (Si)
RDS(on)
0.315Ω
0.315Ω
ID QPL Part Number
-14A JANSR2N7423
-14A JANSF2N7423
International Rectifier’s RAD-Hard HEXFET^®
technology provides high performance power
MOSFETs for space applications. This technology
has over a decade of proven performance and
reliability in satellite applications. These devices
have been characterized for both Total Dose and
Single Event Effects (SEE). The combination of
low Rds(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
TO-254AA
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
n ESD Rating: Class 2 per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
-14
-9.0
A
-56
150
W
1.2
W/°C
VGS
Gate-to-Source Voltage
±20
EAS
Single Pulse Avalanche Energy Á
500
IAR
Avalanche Current À
-14
EAR
Repetitive Avalanche Energy À
15
dv/dt
Peak Diode Recovery dv/dt Â
-41
V
mJ
A
mJ
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
°C
300 ( 0.063 in.(1.6mm) from case for 10s)
Weight
9.3 (Typical )
g
For footnotes refer to the last page
www.irf.com
1
05/13/14