IRHM9230 Datasheet, PDF (1/4 Pages) International Rectifier – TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A)

Previous Datasheet
Index
Next Data Sheet
Provisional Data Sheet No. PD-9.1395
REPETETIVE AVALANCHE AND dv/dt RATED
HEXFET^® TRANSISTOR
IRHM9230
P-CHANNEL
RAD HARD
-200 Volt, 0.8Ω, RAD HARD HEXFET
International Rectifier’s P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability
and breakdown voltage stability at total radiation doses as
high as 10⁵ Rads (Si). Under identical pre- and post-radia-
tion test conditions, International Rectifier’s P-Channel RAD
HARD HEXFETs retain identical electrical specifications
up to 1 x 10⁵ Rads (Si) total dose. No compensation in gate
drive circuitry is required. These devices are also capable
of surviving transient ionization pulses as high as 1 x 10¹²
Rads (Si)/Sec, and return to normal operation within a few
microseconds. Single Event Effect (SEE) testing of Inter-
national Rectifier P-Channel RAD HARD HEXFETs has
demonstrated virtual immunity to SEE failure. Since the
P-Channel RAD HARD process utilizes International
Rectifier’s patented HEXFET technology, the user can ex-
pect the highest quality and reliability in the industry.
P-Channel RAD HARD HEXFET transistors also feature all
of the well-established advantages of MOSFETs, such as
voltage control,very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high-energy pulse circuits in space and weap-
ons environments.
Product Summary
Part Number
BV_DSS
IRHM9230
-200V
R_DS(on)
0.8Ω
I_D
-6.5A
Features:
s Radiation Hardened up to 1 x 10⁵ Rads (Si)
s Single Event Burnout (SEB) Hardened
s Single Event Gate Rupture (SEGR) Hardened
s Gamma Dot (Flash X-Ray) Hardened
s Neutron Tolerant
s Identical Pre- and Post-Electrical Test Conditions
s Repetitive Avalanche Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
s Ceramic Eyelets
s Electrically Isolated
Absolute Maximum Ratings
Pre-Radiation
Parameter
IRHM9230
Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current 
-6.5
-4.1
A
-26
PD @ TC = 25°C
Max. Power Dissipation
75
W
Linear Derating Factor
0.2
W/K …
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy‚
330
mJ
IAR
Avalanche Current 
-6.5
A
EAR
Repetitive Avalanche Energy‚
7.5
mJ
dv/dt
Peak Diode Recovery dv/dt ƒ
-5.0
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to 150
o_C
Lead Temperature
300 (0.063 in. (1 .6mm) from case for 10s)
Weight
9.3 (typical)
g
Notes: See page 4
To Order