IRHM9160_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD-91415G
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
IRHM9160
JANSR2N7425
100V, P-CHANNEL
REF: MIL-PRF-19500/660
RAD-Hard^™ HEXFET^® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHM9160 100K Rads (Si) 0.073Ω
IRHM93160 300K Rads (Si) 0.073Ω
ID QPL Part Number
-35A* JANSR2N7425
-35A* JANSF2N7425
International Rectifier’s RAD-Hard HEXFET^TM
technology provides high performance power
MOSFETs for space applications. This technology
has over a decade of proven performance and
reliability in satellite applications. These devices have
been characterized for both Total Dose and Single
Event Effects (SEE). The combination of low Rdson
and low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
TO-254AA
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @VGS = -12V, TC = 25°C Continuous Drain Current
ID @VGS = -12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
-35*
-24
-140
250
2.0
A
W
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy Á
500
Avalanche Current À
-35
Repetitive Avalanche Energy À
25
Peak Diode Recovery dv/dt Â
-16
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300 ( 0.063 in. (1.6mm) from case for 10s)
Weight
9.3 (typical)
V
mJ
A
mJ
V/ns
o_C
g
*Current is limited by package
For footnotes refer to the last page
www.irf.com
1
04/20/05