IRHM9150_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
PD-90889E
IRHM9150
JANSR2N7422
100V, P-CHANNEL
REF: MIL-PRF-19500/662
RAD Hard^™ HEXFET^® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHM9150 100K Rads (Si) 0.080Ω
IRHM93150 300K Rads (Si) 0.080Ω
ID
-22A
-22A
QPL Part Number
JANSR2N7422
JANSF2N7422
TO-254AA
International Rectifier’s RADHard HEXFET^TM
technology provides high performance power
MOSFETs for space applications. This technology
has over a decade of proven performance and
reliability in satellite applications. These devices
have been characterized for both Total Dose and
Single Event Effects (SEE). The combination of
low Rdson and low gate charge reduces the
power losses in switching applications such as
DC to DC converters and motor control. These
devices retain all of the well established
advantages of MOSFETs such as voltage control,
fast switching, ease of paralleling and temperature
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n SimpleDriveRequirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
n ESD Rating: Class 2 per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
-22
-14
A
-88
150
W
1.2
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy Á
500
mJ
IAR
Avalanche Current À
-22
A
EAR
Repetitive Avalanche Energy À
15
mJ
dv/dt
Peak Diode Recovery dv/dt Â
-23
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
°C
300 ( 0.063 in. (1.6mm) from case for 10s)
Weight
9.3 (typical)
g
For footnotes refer to the last page
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1
05/13/14