IRHM9130_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD - 90888C
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
IRHM9130
100V, P-CHANNEL
RAD-Hard^™ HEXFET^® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHM9130 100K Rads (Si)
IRHM93130 300K Rads (Si)
RDS(on)
0.3Ω
0.3Ω
ID
-11A
-11A
International Rectifier’s RAD-Hard HEXFET^TM technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
TO-254AA
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n SimpleDriveRequirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
-11
-7.0
A
-44
75
W
0.6
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy ➁
190
mJ
IAR
Avalanche Current ➀
-11
A
EAR
Repetitive Avalanche Energy ➀
7.5
mJ
dv/dt
Peak Diode Recovery dv/dt ➂
-10
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
o_C
300 ( 0.063 in. (1.6mm) from case for 10s)
Weight
9.3 (typical)
g
For footnotes refer to the last page
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1
02/18/03