IRHM9064_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD - 91438C
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
IRHM9064
JANSR2N7424
60V, P-CHANNEL
REF: MIL-PRF-19500/660
RAD-Hard^™ HEXFET^® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHM9064 100K Rads (Si)
IRHM93064 300K Rads (Si)
RDS(on)
0.05Ω
0.05Ω
ID QPL Part Number
-35A* JANSR2N7424
-35A* JANSF2N7424
International Rectifier’s RAD-Hard HEXFET^TM technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
TO-254AA
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n SimpleDriveRequirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
-35*
-30
A
-140
250
W
2.0
W/°C
±20
V
500
mJ
-35
A
25
mJ
-5.5
V/ns
-55 to 150
o_C
300 (0.063 in. (1.6mm) from case for 10 S)
9.3 (typical)
g
*Current is limited by internal wire diameter
For footnotes refer to the last page
www.irf.com
1
02/20/03