IRHM9064 Datasheet, PDF (1/4 Pages) International Rectifier – TRANSISTOR P-CHANNEL(BVdss=-60V, Rds(on)=0.060ohm, Id=-35*A)

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Provisional Data Sheet No. PD-9.1438
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET^® TRANSISTOR
IRHM9064
P-CHANNEL
RAD HARD
-60 Volt, 0.060Ω, RAD HARD HEXFET
International Rectifier’s P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability
and breakdown voltage stability at total radiation doses as
high as 10⁵ Rads (Si). Under identical pre- and post-radia-
tion test conditions, International Rectifier’s P-Channel RAD
HARD HEXFETs retain identical electrical specifications up
to 1 x 10⁵ Rads (Si) total dose. No compensation in gate drive
circuitry is required. These devices are also capable of sur-
viving transient ionization pulses as high as 1 x 10¹² Rads
(Si)/Sec, and return to normal operation within a few micro-
seconds. Single Event Effect (SEE) testing of International
Rectifier P-Channel RAD HARD HEXFETs has demon-
strated virtual immunity to SEE failure. Since the P-Chan-
nel RAD HARD process utilizes International Rectifier’s
patented HEXFET technology, the user can expect the high-
est quality and reliability in the industry.
P-Channel RAD HARD HEXFET transistors also feature
all of the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paralleling
and temperature stability of the electrical parameters. They
are well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio amplifi-
ers and high-energy pulse circuits in space and weapons
environments.
Absolute Maximum Ratings
Product Summary
Part Number BVDSS
IRHM9064
-60V
RDS(on)
0.060Ω
ID
-35*A
Features:
n Radiation Hardened up to 1 x 10⁵ Rads (Si)
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n IdenticalPre-andPost-ElectricalTestConditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n CeramicEyelets
Pre-Radiation
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current 
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy ‚
IAR
Avalanche Current 
EAR
Repetitive Avalanche Energy 
dv/dt
Peak Diode Recovery dv/dt ƒ
TJ
Operating Junction
TSTG
Storage Temperature Range
Lead Temperature
Weight
IRHM9064
-35*
-26
-168
250
2.0
± 20
500
-35*
25
-5.5
-55 to 150
Units
A
W
W/K …
V
mJ
A
mJ
V/ns
300 (0.063 in. (1.6mm) from case for 10s ^oC
9.3 (typical)
g
To Order