IRHM7Z60_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD - 91701B
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
IRHM7Z60
30V, N-CHANNEL
RAD-Hard^™ HEXFET^® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID
IRHM7Z60
IRHM3Z60
IRHM4Z60
IRHM8Z60
100K Rads (Si)
300K Rads (Si)
600K Rads (Si)
1000K Rads (Si)
0.014Ω 35*A
0.014Ω 35*A
0.014Ω 35*A
0.014Ω 35*A
TO-254AA
International Rectifier’s RAD-Hard HEXFET^® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
35*
35*
A
140
250
W
2.0
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
±20
500
35
25
0.35
-55 to 150
V
mJ
A
mJ
V/ns
o_C
Lead Temperature
Weight
300 ( 0.063 in. (1.6mm) from case for 10s)
9.3 (Typical )
g
For footnotes refer to the last page
*Current is limited by internal wire diameter
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12/20/01