IRHM7450_15 Datasheet, PDF (1/12 Pages) International Rectifier – Simple Drive Requirements

PD - 90673B
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
IRHM7450
JANSR2N7270
500V, N-CHANNEL
REF: MIL-PRF-19500/603
RAD-Hard^™ HEXFET^® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHM7450 100K Rads (Si)
IRHM3450 300K Rads (Si)
IRHM4450 500K Rads (Si)
IRHM8450 1000K Rads (Si)
RDS(on)
0.45Ω
0.45Ω
0.45Ω
0.45Ω
ID QPL Part Number
11A JANSR2N7270
11A JANSF2N7270
11A JANSG2N7270
11A JANSH2N7270
TO-254AA
International Rectifier’s RAD-Hard^TM HEXFET^®
technology provides high performance power
MOSFETs for space applications. This technology
has over a decade of proven performance and
reliability in satellite applications. These devices have
been characterized for both Total Dose and Single
Event Effects (SEE). The combination of low Rdson
and low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
11
7.0
A
44
150
W
1.2
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
±20
500
11
15
3.5
-55 to 150
V
mJ
A
mJ
V/ns
o_C
Lead Temperature
Weight
300 (0.063 in. (1.6mm) from case for 10s)
9.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
05/18/06