IRHM7360SE_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
PD-91224E
IRHM7360SE
JANSR2N7391
400V, N-CHANNEL
REF:MIL-PRF-19500/661
RAD Hard^™ HEXFET^® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHM7360SE 100K Rads (Si) 0.20Ω
ID QPL Part Number
22A JANSR2N7391
International Rectifier’s RADHard^TM HEXFET^® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a
decade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC
to DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling
and temperature stability of electrical parameters.
TO-254AA
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
n ESD Rating: Class 3B per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
22
14
A
88
250
W
2.0
W/°C
VGS
Gate-to-Source Voltage
±20
EAS
Single Pulse Avalanche Energy Á
500
IAR
Avalanche Current À
22
EAR
Repetitive Avalanche Energy À
25
dv/dt
Peak Diode Recovery dv/dt Â
3.0
V
mJ
A
mJ
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
°C
300 (0.063 in. (1.6mm) from case for 10 sec.)
Weight
9.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
06/03/14