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IRHM7260_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements
PD-91332F
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-254AA)
IRHM7260
JANSR2N7433
200V, N-CHANNEL
REF: MIL-PRF-19500/663
RAD-Hard™ HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHM7260 100K Rads (Si)
IRHM3260 300K Rads (Si)
IRHM4260 500K Rads (Si)
IRHM8260 1000K Rads (Si)
RDS(on)
0.070Ω
0.070Ω
0.070Ω
0.070Ω
ID
35A*
35A*
35A*
35A*
QPL Part Number
JANSR2N7433
JANSF2N7433
JANSG2N7433
JANSH2N7433
International Rectifier’s RAD-HardTM HEXFET®
technology provides high performance power
MOSFETs for space applications. This technology
has over a decade of proven performance and
reliability in satellite applications. These devices have
been characterized for both Total Dose and Single
Event Effects (SEE). The combination of low Rdson
and low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
TO-254AA
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
35*
25
A
140
250
W
2.0
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
±20
500
35
25
5.7
-55 to 150
300 (0.063 in.(1.6mm) from case for 10s)
9.3 (Typical)
V
mJ
A
mJ
V/ns
oC
g
*Current is limited by package
For footnotes refer to the last page
www.irf.com
1
08/09/07