IRHM7160 Datasheet, PDF (1/8 Pages) International Rectifier – REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

PD - 91331C
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-254AA)
IRHM7160
JANSR2N7432
100V, N-CHANNEL
REF: MIL-PRF-19500/663
RAD Hard^™ HEXFET^® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHM7160
100K Rads (Si) 0.045Ω
IRHM3160
300K Rads (Si) 0.045Ω
IRHM4160
600K Rads (Si) 0.045Ω
IRHM8160
1000K Rads (Si) 0.045Ω
ID QPL Part Number
35*A JANSR2N7432
35*A JANSF2N7432
35*A JANSG2N7432
35*A JANSH2N7432
TO-254AA
International Rectifier’s RADHard HEXFET^® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
! Single Event Effect (SEE) Hardened
! Low RDS(on)
! Low Total Gate Charge
! Proton Tolerant
! Simple Drive Requirements
! Ease of Paralleling
! Hermetically Sealed
! Ceramic Package
! Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
Units
35*
35*
A
201
250
W
2.0
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy ➁
500
Avalanche Current ➀
35
Repetitive Avalanche Energy ➀
25
Peak Diode Recovery dv/dt ➂
7.3
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300 ( 0.063 in.(1.6mm) from case for 10s)
Weight
9.3 (Typical )
V
mJ
A
mJ
V/ns
o_C
g
*Current limited by pin diameter
For footnotes refer to the last page
www.irf.com
1
8/14/01