IRHM7150_15 Datasheet, PDF (1/12 Pages) International Rectifier – Simple Drive Requirements

PD - 90675D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
IRHM7150
JANSR2N7268
100V, N-CHANNEL
REF: MIL-PRF-19500/603
RAD Hard^™ HEXFET^® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHM7150 100K Rads (Si)
IRHM3150 300K Rads (Si)
IRHM4150 500K Rads (Si)
IRHM8150 1000K Rads (Si)
RDS(on)
0.065Ω
0.065Ω
0.065Ω
0.065Ω
ID QPL Part Number
34A JANSR2N7268
34A JANSF2N7268
34A JANSG2N7268
34A JANSH2N7268
TO-254AA
International Rectifier’s RADHard^TM HEXFET^®
technology provides high performance power
MOSFETs for space applications. This technology
has over a decade of proven performance and
reliability in satellite applications. These devices have
been characterized for both Total Dose and Single
Event Effects (SEE). The combination of low Rdson
and low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
34
21
A
136
150
W
1.2
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy Á
500
mJ
IAR
Avalanche Current À
34
A
EAR
Repetitive Avalanche Energy À
15
mJ
dv/dt
Peak Diode Recovery dv/dt Â
5.5
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
o_C
300 (0.063 in. (1.6mm) from case for 10s)
Weight
9.3 (Typical)
g
For footnotes refer to the last page
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1
05/02/06