IRHM7130_15 Datasheet, PDF (1/12 Pages) International Rectifier – Simple Drive Requirements

PD - 90707D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-254AA)
IRHM7130
100V, N-CHANNEL
RAD Hard^™ HEXFET^® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) I D
IRHM7130
100K Rads (Si) 0.18Ω 14A
IRHM3130
300K Rads (Si) 0.18Ω 14A
IRHM4130
600K Rads (Si) 0.18Ω 14A
IRHM8130
1000K Rads (Si) 0.18Ω 14A
International Rectifier’s RADHard HEXFET^® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
TO-254AA
Features:
! Single Event Effect (SEE) Hardened
! Low RDS(on)
! Low Total Gate Charge
! Proton Tolerant
! Simple Drive Requirements
! Ease of Paralleling
! Hermetically Sealed
! Ceramic Package
! Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
Units
14
9.0
A
56
75
W
0.60
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy ➁
160
Avalanche Current ➀
14
Repetitive Avalanche Energy ➀
7.5
Peak Diode Recovery dv/dt ➂
5.5
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300 ( 0.063 in.(1.6mm) from case for 10s)
Weight
9.3(Typical )
V
mJ
A
mJ
V/ns
o_C
g
For footnotes refer to the last page
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