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IRHM7064_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements
PD-91564G
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-254AA)
IRHM7064
JANSR2N7431
60V, N-CHANNEL
REF:MIL-PRF-19500/663
RAD-Hard™ HEXFET® TECHNOLOGY
Product Summary
Part Number
IRHM7064
IRHM3064
IRHM4064
IRHM8064
Radiation Level
100K Rads (Si)
300K Rads (Si)
500K Rads (Si)
1000K Rads (Si)
RDS(on)
0.021Ω
0.021Ω
0.021Ω
0.030Ω
ID
35A*
35A*
35A*
35A*
QPL Part Number
JANSR2N7431
JANSF2N7431
JANSG2N7431
JANSH2N7431
TO-254AA
International Rectifier’s RAD-HardTM HEXFET®
technology provides high performance power
MOSFETs for space applications. This technology
has over a decade of proven performance and
reliability in satellite applications. These devices have
been characterized for both Total Dose and Single
Event Effects (SEE). The combination of low Rdson
and low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
35*
35*
A
140
250
W
2.0
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy Á
500
mJ
IAR
Avalanche Current À
35
A
EAR
Repetitive Avalanche Energy À
25
mJ
dv/dt
Peak Diode Recovery dv/dt Â
2.5
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
oC
300 (0.063 in.(1.6mm) from case for 10s)
Weight
9.3 (Typical)
g
*Current is limited by package
For footnotes refer to the last page
www.irf.com
1
08/10/07