IRHM7064 Datasheet, PDF (1/4 Pages) International Rectifier – TRANSISTOR N-CHANNEL

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Provisional Data Sheet No. PD-9.1564
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET^® TRANSISTOR
IRHM7064
IRHM8064
N-CHANNEL
MEGA RAD HARD
60 Volt, 0.021Ω, MEGA RAD HARD HEXFET
International Rectifier’s RAD HARD technology HEXFETs
demonstrate virtual immunity to SEE failure. Addition-
ally, under identical pre- and post-radiation test condi-
tions, International Rectifier’s RAD HARD HEXFETs
retain identical electrical specifications up to 1 x 10⁵ Rads
(Si) total dose. No compensation in gate drive circuitry is
required. These devices are also capable of surviving
transient ionization pulses as high as 1 x 10¹² Rads (Si)/
Sec, and return to normal operation within a few micro-
seconds. Since the RAD HARD process utilizes Interna-
tional Rectifier’s patented HEXFET technology, the user
can expect the highest quality and reliability in the indus-
try.
RAD HARD HEXFET transistors also feature all of the well-
established advantages of MOSFETs, such as voltage con-
trol, very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
Product Summary
Part Number
BVDSS
IRHM7064
60V
IRHM8064
60V
RDS(on)
0.021Ω
0.021Ω
ID
35A*
35A*
Features:
s Radiation Hardened up to 1 x 10⁶ Rads (Si)
s Single Event Burnout (SEB) Hardened
s Single Event Gate Rupture (SEGR) Hardened
s Gamma Dot (Flash X-Ray) Hardened
s Neutron Tolerant
s Identical Pre- and Post-Electrical Test Conditions
s Repetitive Avalanche Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
s Electrically Isolated
s Ceramic Eyelets
Absolute Maximum Ratings
Pre-Radiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current Œ
Max. Power Dissipation
Linear Derating Factor
IRHM7064, IRHM8064
35*
35*
284
250
2.0
Units
A
W
W/K 
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Notes: See page 4
Gate-to-Source Voltage
±20
V
Single Pulse Avalanche Energy 
500
mJ
Avalanche Current Œ
35
A
Repetitive Avalanche Energy Œ
25
mJ
Peak Diode Recovery dv/dt Ž
4.5
V/ns
Operating Junction
Storage Temperature Range
-55 to 150
o_C
Lead Temperature
300 (0.063 in (1.6mm) from case for 10 sec.)
Weight
To Order
9.3 (typical)
g
*Current is limited by pin diameter