IRHM57Z60 Datasheet, PDF (1/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)

PD - 93786B
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number Radiation Level
IRHM57Z60 100K Rads (Si)
IRHM53Z60 300K Rads (Si)
IRHM54Z60 600K Rads (Si)
IRHM58Z60 1000K Rads (Si)
RDS(on)
0.0095Ω
0.0095Ω
0.0095Ω
0.010Ω
ID
35A*
35A*
35A*
35A*
IRHM57Z60
30V, N-CHANNEL
4# TECHNOLOGY
c
TO-254AA
International Rectifier’s R5^TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm²)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Features:
n Single Event Effect (SEE) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermatically Sealed
n Electically Isolated
n Ceramic Eyelets
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Units
35*
35*
A
140
250
W
2.0
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy ➁
500
Avalanche Current ➀
35
Repetitive Avalanche Energy ➀
25
Peak Diode Recovery dv/dt ➂
1.1
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300 (0.063 in./1.6 mm from case for 10s)
Weight
9.3 (Typical)
V
mJ
A
mJ
V/ns
o_C
g
* Current is limited by internal wire diameter
For footnotes refer to the last page
www.irf.com
1
08/06/02