IRHM57260_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD - 91862D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
IRHM57260
200V, N-CHANNEL
4# TECHNOLOGY
c
Product Summary
Part Number Radiation Level
IRHM57260 100K Rads (Si)
IRHM53260 300K Rads (Si)
IRHM54260 600K Rads (Si)
IRHM58260 1000K Rads (Si)
RDS(on)
0.049Ω
0.049Ω
0.049Ω
0.050Ω
ID
35A*
35A*
35A*
35A*
TO-254AA
International Rectifier’s R5^TM technology provides ^Features:
high performance power MOSFETs for space appli- n Single Event Effect (SEE) Hardened
cations. These devices have been characterized for n Neutron Tolerant
Single Event Effects (SEE) with useful performance n Identical Pre- and Post-Electrical Test Conditions
up to an LET of 80 (MeV/(mg/cm²)). The combination n Repetitive Avalanche Ratings
of low RDS(on) and low gate charge reduces the power n Dynamic dv/dt Ratings
losses in switching applications such as DC to DC n Simple Drive Requirements
converters and motor control. These devices retain n Ease of Paralleling
all of the well established advantages of MOSFETs n Hermatically Sealed
such as voltage control, fast switching, ease of paral- n Electically Isolated
leling and temperature stability of electrical param- _{n Ceramic Eyelets}
eters.
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
35*
32
A
140
250
W
2.0
W/°C
±20
V
500
mJ
35
A
25
mJ
10
V/ns
-55 to 150
o_C
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
g
* Current is limited by internal wire diameter
For footnotes refer to the last page
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1
01/30/03