IRHM57260SE Datasheet, PDF (1/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE

PD - 93880B
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
IRHM57260SE
200V, N-CHANNEL
4# TECHNOLOGY
c
Product Summary
Part Number Radiation Level
IRHM57260SE 100K Rads (Si)
RDS(on) ID
0.049Ω 35A*
TO-254AA
International Rectifier’s R5^TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm²)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Features:
n Single Event Effect (SEE) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electically Isolated
n Ceramic Eyelets
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Units
35*
35*
A
140
250
W
2.0
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy ➁
500
Avalanche Current ➀
35
Repetitive Avalanche Energy ➀
25
Peak Diode Recovery dv/dt ➂
10
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
Weight
300 (0.063 in.(1.6 mm from case for 10s))
9.3 ( Typical)
V
mJ
A
mJ
V/ns
o_C
g
* Current is limited by package
For footnotes refer to the last page
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1
01/30/03