IRHM57160_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD-93784G
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number Radiation Level
IRHM57160 100K Rads (Si)
IRHM53160 300K Rads (Si)
IRHM54160 600K Rads (Si)
IRHM58160 1000K Rads (Si)
RDS(on)
0.018Ω
0.018Ω
0.018Ω
0.019Ω
ID
35A*
35A*
35A*
35A*
IRHM57160
100V, N-CHANNEL
5 TECHNOLOGY
™
TO-254AA
International Rectifier’s R5^TM technology provides ^Features:
high performance power MOSFETs for space appli- n Single Event Effect (SEE) Hardened
cations. These devices have been characterized for n Neutron Tolerant
Single Event Effects (SEE) with useful performance n Identical Pre- and Post-Electrical Test Conditions
up to an LET of 80 (MeV/(mg/cm²)). The combination n Repetitive Avalanche Ratings
of low RDS(on) and low gate charge reduces the power n Dynamic dv/dt Ratings
losses in switching applications such as DC to DC n Simple Drive Requirements
converters and motor control. These devices retain n Ease of Paralleling
all of the well established advantages of MOSFETs n Hermatically Sealed
such as voltage control, fast switching, ease of paral- n Electically Isolated
leling and temperature stability of electrical param- _{n Ceramic Eyelets}
eters.
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Units
35*
35*
A
140
250
W
2.0
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy Á
500
Avalanche Current À
35
Repetitive Avalanche Energy À
25
Peak Diode Recovery dv/dt Â
3.4
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300 (0.063 in. /1.6 mm from case for 10s)
Weight
9.3 (Typical)
V
mJ
A
mJ
V/ns
°C
g
* Current is limited by package
For footnotes refer to the last page
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1
01/07/11