IRHLYS797034CM Datasheet, PDF (1/9 Pages) International Rectifier – RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)

PD-97292A
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
Product Summary
Part Number
Radiation Level
IRHLYS797034CM 100K Rads (Si)
IRHLYS793034CM 300K Rads (Si)
RDS(on) ID
0.074Ω -20A*
0.074Ω -20A*
2N7625T3
IRHLYS797034CM
60V, P-CHANNEL
TECHNOLOGY
™
Low-Ohmic
TO-257AA
International Rectifier’s R7^TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable
operating limits over the full operating temperature
and post radiation. This is achieved while
maintaining single event gate rupture and single
event burnout immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
n Complimentary N-Channel Available -
IRHLYS77034CM
Absolute Maximum Ratings
Parameter
ID@VGS = -4.5V, TC = 25°C Continuous Drain Current
ID@VGS = -4.5V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
-20*
-16.6
A
-80
75
W
0.6
W/°C
±10
V
181
mJ
-20
A
7.5
mJ
10.9
-55 to 150
V/ns
°C
300 (0.063in/1.6mm from case for 10s)
4.3 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
10/05/10