IRHLUC7970Z4_15 Datasheet, PDF (1/9 Pages) International Rectifier – Simple Drive Requirements

RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (LCC-6)
Product Summary
Part Number Radiation Level RDS(on) ID
IRHLUC7970Z4 100K Rads (Si) 1.60Ω -0.65A
IRHLUC7930Z4 300K Rads (Si) 1.60Ω -0.65A
PD-97574
2N7627UC
IRHLUC7970Z4
60V, DUAL P-CHANNEL
TECHNOLOGY
™
International Rectifier’s R7^TM Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments.The threshold voltage remains within
acceptable operating limits over the full operating
temperature and post radiation.This is achieved while
maintaining single event gate rupture and single event
burnout immunity.
The device is ideal when used to interface directly with most
logic gates, linear IC’s, micro-controllers, and other device
types that operate from a 3.3-5V source. It may also be
used to increase the output current of a PWM, voltage
comparator or an operational amplifier where the logic level
drive signal is available.
LCC-6
Features:
n 5V CMOS and TTL Compatible
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
n Complimentary N-Channel Available -
IRHLUC770Z4
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = -4.5V, TC = 25°C Continuous Drain Current
ID @ VGS = -4.5V,TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting SurfaceTemp
Weight
-0.65
-0.41
-2.6
1.0
0.01
±10
34
-0.65
0.1
-5.6
-55 to 150
300 (for 5s)
0.2 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
For footnotes refer to the last page
www.irf.com
1
10/11/10