IRHLUB780Z4 Datasheet, PDF (1/8 Pages) International Rectifier – RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB)

PD - 95813
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (UB)
IRHLUB770Z4
60V, N-CHANNEL
TECHNOLOGY
c
Product Summary
Part Number Radiation Level RDS(on) ID
IRHLUB770Z4 100K Rads (Si) 0.55Ω 0.8A
IRHLUB730Z4 300K Rads (Si) 0.55Ω 0.8A
IRHLUB740Z4 600K Rads (Si) 0.55Ω 0.8A
IRHLUB780Z4 1000K Rads (Si) 0.55Ω 0.8A
UB
International Rectifier’s R7^TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable operating
limits over the full operating temperature and post
radiation. This is achieved while maintaining single
event gate rupture and single event burnout immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
n Complimentary P-Channel Available -
IRHLUB7970Z4
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC = 25°C Continuous Drain Current
ID @ VGS = 4.5V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
0.8
0.5
3.2
0.6
0.0045
±10
2.0
0.8
0.06
4.0
-55 to 150
300 (for 5s)
43 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o_C
mg
For footnotes refer to the last page
www.irf.com
1
02/02/04