IRHLG77214_15 Datasheet, PDF (1/9 Pages) International Rectifier – Simple Drive Requirements

PD-97339
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (MO-036AB)
Product Summary
Part Number Radiation Level
IRHLG77214 100K Rads (Si)
IRHLG73214 300K Rads (Si)
RDS(on)
1.1Ω
1.1Ω
ID
0.8A
0.8A
2N7614M1
IRHLG77214
250V, Quad N-CHANNEL
TECHNOLOGY
™
International Rectifier’s R7^TM Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments.The threshold voltage remains within
acceptable operating limits over the full operating
temperature and post radiation.This is achieved while
maintaining single event gate rupture and single event
burnout immunity.
The device is ideal when used to interface directly with most
logic gates, linear IC’s, micro-controllers, and other device
types that operate from a 3.3-5V source. It may also be
used to increase the output current of a PWM, voltage
comparator or an operational amplifier where the logic level
drive signal is available.
MO-036AB
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC= 25°C Continuous Drain Current
ID @ VGS = 4.5V, TC= 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
0.8
0.5
3.2
1.4
0.01
±10
50.4
0.8
0.14
12.3
-55 to 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o_C
300 (0.063in/1.6mm from case for 10s)
1.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
02/25/11