IRHLG7670Z4_15 Datasheet, PDF (1/16 Pages) International Rectifier – Simple Drive Requirements

PRELIMINARY
PD-97191B
2N7635M1
IRHLG7670Z4
RADIATION HARDENED ^{60V, Combination 2N-2P-CHANNEL}
LOGIC LEVEL POWER MOSFET
THRU-HOLE (MO-036AB)
TECHNOLOGY
™
Product Summary
Part Number Radiation Level
IRHLG7670Z4 100K Rads (Si)
IRHLG7630Z4 300K Rads (Si)
R_DS(on)
0.6Ω
1.25Ω
0.6Ω
1.25Ω
I_D
1.07A
-0.71A
1.07A
-0.71A
CHANNEL
N
P
N
P
MO-036AB
International Rectifier’s R7^TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable
operating limits over the full operating temperature
and post radiation. This is achieved while maintaining
single event gate rupture and single event burnout
immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Absolute Maximum Ratings (Per Die)
Parameter
ID@ VGS = ±4.5V, TC= 25°C Continuous Drain Current
ID@ VGS = ±4.5V, TC=100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Features:
n 5V CMOS and TTL Compatible
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Pre-Irradiation
N-Channel
P-Channel Units
1.07
0.67
-0.71
-0.45
A
4.28
-2.84
1.0
1.0
W
0.01
0.01
W/°C
±10
±10
V
13 Á
21 ²
mJ
1.07
-0.71
A
0.1
0.1
mJ
7.0 Â
-14 ³
V/ns
-55 to 150
o_C
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
03/01/11