IRHLF670Z4 Datasheet, PDF (1/8 Pages) International Rectifier – RADIATION HARDENED LOGIC LEVEL POWER MOSFET

PD - 94695
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (TO-39)
IRHLF670Z4
60V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHLF670Z4 100K Rads (Si) 0.5Ω
IRHLF630Z4 300K Rads (Si) 0.5Ω
IRHLF640Z4 600K Rads (Si) 0.5Ω
IRHLF680Z4 1000K Rads (Si) 0.5Ω
ID
1.6A*
1.6A*
1.6A*
1.6A*
T0-39
International Rectifier’s R6^TM Logic Level Power
Mosfets provide simple solution to interfacing CMOS
and TTL control circuits to power devices in space
and other radiation environments. The threshold
voltage remains within accptable operating limits
over the full operating temperature and post radia-
tion. This is achieved while maintaining single event
gate rupture and single event burnout immunity.
These devices are used in applications such as cur-
rent boost low signal source in PWM, voltage com-
parator and operational amplifiers.
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
n Complimentary P-Channel Available -
IRHLF6970Z4
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC = 25°C Continuous Drain Current
ID @ VGS = 4.5V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
1.6*
1.0*
A
6.4
5.0
W
0.04
±10
W/°C
V
9.0
mJ
1.6
A
0.5
mJ
3.5
-55 to 150
V/ns
o_C
300 (0.063in/1.6mm from case for 10s)
0.98 (Typical)
g
* Derated to match the Complimentary P-Channel Logic Level Power Mosfet -IRHLF6970Z4
For footnotes refer to the last page
www.irf.com
1
07/07/03