IRHLA7970Z4 Datasheet, PDF (1/9 Pages) International Rectifier – RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (14-LEAD FLAT PACK

PD-97306
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (14-LEAD FLAT PACK)
Product Summary
Part Number Radiation Level RDS(on) ID
IRHLA7970Z4 100K Rads (Si) 1.36Ω -0.56A
IRHLA7930Z4 300K Rads (Si) 1.36Ω -0.56A
2N7630M2
IRHLA7970Z4
60V, Quad P-CHANNEL
TECHNOLOGY
™
International Rectifier’s R7^TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable operating
limits over the full operating temperature and post
radiation. This is achieved while maintaining single
event gate rupture and single event burnout immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
14-Lead Flat Pack
Features:
n 5V CMOS and TTL Compatible
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
n Complimentary N-Channel Available -
IRHLA770Z4
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = -4.5V, TC=25°C
ID @ VGS = -4.5V, TC=100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
-0.56
-0.35
A
-2.24
0.6
W
0.005
W/°C
±10
V
26
mJ
-0.56
A
0.06
mJ
-5.79
V/ns
-55 to 150
°C
300 (0.63 in./1.6 mm from case for 10s)
0.52 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
03/17/08